AC and DC Bias-Temperature Stability of Coplanar Homojunction a-InGaZnO Thin-Film Transistors

P-11: Electrical Properties and Stability of Dual-Gate Coplanar Homojunction Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor

The electrical characteristics and stabilities of dual-gate (DG) coplanar homojunction amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) are described. When the gate voltage is applied on top and bottom electrodes, the DG a-IGZO TFT showed an excellent electrical performance with the subthreshold swing of 99 mV/dec, the mobility of 15.1 cm/V·s and the on-off ratio of 10. U...

Effects of Interface and Bulk States on the Stability of Amorphous InGaZnO Thin Film Transistors under Gate Bias and Temperature Stress

The gate bias and temperature instability of InGaZnO TFTs were improved by adopting double stacked channel layer (DSCL). The mechanism of Vth shift under stress was studied by this structure. An interface with of less oxygen plasma damaging and lower oxygen vacancies in bulk were achieved by DSCL, resulting in a higher stability of Vth.

On the Reliability of an InGaZnO Thin-Film Transistor under Negative Bias Illumination Stress

The positive gate-bias temperature stress (PBTS)-induced instability in top gate self-aligned coplanar InGaZnO thin-film transistors is experimentally decomposed into contributions of distinct mechanisms by combining the stress-time-divided measurements and the extraction of subgap density-of-states (DOS) from the optical response of C-V characteristics. It is found that a total threshold volta...

Enhanced bias stress stability of a-InGaZnO thin film transistors by inserting an ultra- thin interfacial InGaZnO:N layer

a-InGaZnO thin-film transistors for AMOLEDs: Electrical stability and pixel-circuit simulation

Charlene Chen (SID Student Member) Katsumi Abe Hideya Kumomi Jerzy Kanicki (SID Member) Abstract — Inverted-staggered amorphous In–Ga–Zn–O (a-InGaZnO) thin-film transistors (TFTs) were fabricated and characterized on glass substrates. The a-InGaZnO TFTs exhibit adequate field-effect mobilities, sharp subthreshold slopes, and very low off-currents. The current temperature stress (CTS) on the a-I...